Abstract
Detailed evidence is presented which shows that previously published analyses of various investigations regarding the electrical characteristics of the GaAs MOS system lead to incorrect conclusions. Primarily the results were interpreted in terms of models which were developed to fit the Si-SiO 2 interface properties. However, detailed I–V and admittance measurements show that there are basic differences between the two systems, as the one with GaAs exhibits a charge injection phenomenon across the interface barrier, oxide conduction and a complicated (up to now insufficiently understood) interface behaviour. All these effects prevent the determination of interface state densities by conventional methods. The conclusion, that simply because of a high density of interface states neither accumulation nor inversion are possible, is not justified.
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