Abstract
Interpretation of DLTS measurements performed on Al-SiO2-Si structures with low densities of interface states (<1010 cm-2 eV-1) is re-examined critically on the basis of some original deep-level transient current spectroscopy (DLTCS) measurements. A comparison of DLTCS spectra obtained in the depletion and accumulation modes of operation suggests an interference between the transient capacitance of the oxide and that of the space-charge region of the semiconductor. Possible mechanisms of charge relaxation in the gate oxide are discussed, mainly in connection with the available data on time-resolved charge transport in a-SiO2. Suggestions are made as to how to depress the interferences or, alternatively, how to distinguish between the two types of transients.
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