On the impurity photoconductivity of uniaxially stressed p‐Ge

Abstract

Far infrared photoconductivity of stressed p-Ge in the high-frequency spectral range corresponding to transitions from the acceptor ground state to the split-off subband has been observed for the first time. Calculations of photoconductivity spectra of stressed Ge taking into account the resonant states have been made. The calculation results are in good agreement with the experimental data. It has been shown that the transitions into the resonant states are much weaker compared with those into the continuum of the upper subband, and therefore the corresponding spectral lines are difficult to observe in the photoconductivity spectra.