Abstract
Modification of localized and resonant states at asymmetric short-range defects in III–V semiconductors under hydrostatic compression was studied within the kp method. The impurity contribution to the density of states was calculated using the multiband generalization of the Slater-Koster approximation for defects asymmetric along [001], [110], or [111] axes. The transition between resonant and localized states was studied, the mechanism of the appearance and disappearance of a pair of levels under compression was described. The possibility of comparing the calculation results and experimental data was discussed.
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