On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown Silicon

Abstract

The effects of heavy doping of Si on grown-in void size-density distributions and on Flow Pattern Defect (FPD) and Secco Etch Pit Defect (SEPD) density are discussed. Grown-in defects are studied using Scanning Infra Red Microscopy (SIRM) and Secco etching. Doping with 10^20 Ge atoms cm^-3 has a limited effect on the grown-in void size-density distribution but has a clear effect on the FPD density. The observed lower FPD density is most probably related to a decrease of the multiple void density. Co-doping with 10^20 B atoms cm^-3 leads to strong a suppression of the void density by nearly two orders of magnitude in agreement with the reported strong reduction of Crystal Originated Particle (COP) density in low resistivity p-type Si.