Abstract
Pulsed laser deposition of epitaxial, single-crystal Nd:Gd3Ga5O12 (Nd:GGG) films on Y3Al5O12 substrates with thicknesses up to 135 μm and propagation losses as low as 0.1 dB/cm is reported. Rutherford backscattering spectrometry has shown constant stoichiometry for the films throughout their depth. Fluorescence properties were similar to that of the bulk Nd:GGG crystal used as a target material for the deposition and lasing action has been observed at 1059.0 and 1060.6 nm after pumping by a Ti:sapphire laser operating at 808 nm. A laser threshold of 18 mW has been obtained and a slope efficiency of 17.5% has been observed using an output coupler of 4.5%. The low losses in combination with the high numerical aperture (0.75) and the thickness of the structures make them suitable for high-power diode pumping.
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