Abstract
The Nd,Cr' co-doped GGG epitaxial thin films for self Q-switched waveguide laser has been fabricated by a two-targetpulsed laser deposition (PLD) method. The concentrauons of Nd and Cr ion in the co-doped GGG thin films are wellcontrolled by channg respective KrF laser ablation fluence and repelition rate for Nd:GGG and Cr,Ca:GGG sinteredtargets The strucmre of Nd,Cr:GGG thin films on YAG substrate shows a planar waveguide structure with high numericalaperture. It is confirmed that Nd and Cr ions are optically active as laser active ions and saturable absorbers respectivelyat 1.06 pin to be used for monolithic self-Q-switched waveguide laser to generate high peak power and short pulse outputKeywords: Laser ablation, pulsed laser deposition, waveguide laser, co-doping, optical thin film
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