On the g Factor for Electrons in n-Type Silicon Surface Inversion Layers

Abstract

Self-consistent calculations for energy levels are performed for n-type inversion layers of silicon with magnetic field perpendicular to the (100) surface. Physical quantities are shown to have an oscillation as the magnetic field is varied. An “apparent” g factor, g*, obtained from a period of the oscillation of states density at the Fermi level is plotted as a function of the Γ/2βH, where Γ is the width of Landau levels. The results show that g*∼5 for Γ <2βH and g*∼g for Γ≫2/βH.