Abstract
The feasibility and potential of laser sources based on intersubband transitions in quantum wells and strained layers will be presented. The basic schemes and proposed structures for both electrically and optically pumped devices are discussed. Both conduction band and valence band quantum wells as well as strained layers may be used as the active layer of these lasers. These sources can be either optically or electrically pumped with each having its own advantages. Various material systems which are appropriate for these applications will be described. >
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