Abstract

Fan-out wafer-level packaging (FOWLP) is an interesting platform for Microelectromechanical systems (MEMS) sensor packaging. Employing FOWLP for MEMS sensor packaging has some unique challenges, while some originate merely from the fabrication of redistribution layers (RDL). For instance, it is crucial to protect the delicate structures and fragile membranes during RDL formation. Thus, additive manufacturing (AM) for RDL formation seems to be an auspicious approach, as those challenges are conquered by principle. In this study, by exploiting the benefits of AM, RDLs for fan-out packaging of capacitive micromachined ultrasound transducers (CMUT) were realized via drop-on-demand inkjet printing technology. The long-term reliability of the printed tracks was assessed via temperature cycling tests. The effects of multilayering and implementation of an insulating ramp on the reliability of the conductive tracks were identified. Packaging-induced stresses on CMUT dies were further investigated via laser-Doppler vibrometry (LDV) measurements and the corresponding resonance frequency shift. Conclusively, the bottlenecks of the inkjet-printed RDLs for FOWLP were discussed in detail.

Highlights

  • Fan-out wafer-level packaging (FOWLP) has spurred increasing interest due to significant cost advantages over competitive technologies, increased interconnect density, as well as enhanced electrical and thermal package performance

  • With its roots in integrated circuit (IC) manufacturing technology, FOWLP has recently gained a lot of attention for microelectromechanical systems (MEMS) and sensors packaging

  • Two Ag layers were ink-jetted over the metallic pads of components and epoxy molding compound (EMC) in a drop-on-demand manner

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Summary

Introduction

Fan-out wafer-level packaging (FOWLP) has spurred increasing interest due to significant cost advantages over competitive technologies, increased interconnect density, as well as enhanced electrical and thermal package performance. With its roots in integrated circuit (IC) manufacturing technology, FOWLP has recently gained a lot of attention for microelectromechanical systems (MEMS) and sensors packaging. Some examples for FOWLP of sensors including MEMS-based acceleration. 2 2ofo1f313 anacdceplreersastuiorne saenndsoprrse,scsaupreacsietinvseomrs,iccraopmaacicthivineemdiucrltormasaocnhiicnterdanusldtruacseornsic(CtrManUsTdsu)c, egrass(sCeMnsUoTrss)a,ngdas bisoemnseodriscaalnsdenbsioomrsewdiecraelrseecnesnotrlys wreearleizreedceanntdlyrerepaolritzeedd[a1n–d7]r. EEmmplpolyoiynigngFOFWOLWPLfPor fMorEMMSEsMenSsosrenpsaocrkapgainckgacgrienagtescsroeamteesunsoiqmuee cuhnailqleunegecsh[a2l]l.enFgoersin[s2ta].ncFeo,r thinestthainncae,ntdhesetnhsinitiavnedpsaerntssiotifvMe pEaMrtSs coofmMpEoMneSnctosmarpeoinnecnotms apraetiibnlceowmipthatFibOleWwLiPthpFrOocWesLsPespsruocchesasses lasmucinhataisngla, mmionldatiinngg,,bmacokl-dgirningd, ibnagckan-gdridnidciinngg. ATnhdisdleiacidnsgt.oTdheitserlieoardastioton odfecteormioproantieonnt opfercfoomrmpaonnceen, t i.ep.e, raforersmoannacnec,ei.fer.e,qaureenscoynashnicfet ofrfeaquMeEnMcySsmhiifctroofpahoMnEe,MoSr mmeicmrobprahnoenreu, portumree,mwbhriacnhearruepistsuurees, wwhitihch maorledisesnuceaspwsuiltahtimonolpdeernscea[p7s].ulation per se [7]. MMoroeroevoevre, rs,omsoemisesuisessuaerseaerme eermgienrggfirnogmfrtohme tythpeicatyl fpaibcarilcafatibornicpartoiocnesspersoocefsrseedsisotrfibreudtiiosntrilabyuetirosn (RlaDyLe)rsfo(rRfDanL-)ofuotr pfaanc-koaugteps,aackcaogmebs,inaactoiomnboifnsaptiuotnteorfinsgp,upttheortionlgit,hpohgortaoplihthicopgrroacpehsiscesp,reotccehsisnegs,, aestcwhienllg, asaselwecetlrloapslaetleincgtr.oRplDatLinsga.reRDtyLpsicaarlelytympeictaalllyinmteerctaolninnetectrscounsneedcttso upsreodvitdoepproovwiderespuopwpelyr saunpdprloyuatned sirgonuatles swigitnhailns twheithpianckthaegepaanckdatgoewaanrddstoitws paredrispihtserpye[r8ip].hTeoryen[8s]u.rTeopreonpseurrefupnrcotpioenrafluitnyctoifoMnaEliMtySo, f itMisEeMssSe,nittiiasletsosetenmtiaplotroatreilmypporroatreiclyt dperloitceacttedseelnicsaintegsaernesains gdaurreinasgdRuDriLngprRoDceLspsirnogceasnsdingenasnudreenthsuatre tetmhaptotreamrypporroarteycptiroonteiscteinotnirieslyenretimreolyverdemafotevrewdaarfdt.erTwhaisrdco.

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