Abstract
Quantum dots (QDs) have emerged as a highly promising material for future display applications, offering advantages such as tunable emission wavelengths, narrow linewidths, and the ability to cover a broad color gamut. Traditionally, cadmium selenide (CdSe) QDs have dominated the electroluminescence (EL) QD light-emitting Diode (QLED) landscape. However, the presence of toxic metal cadmium in CdSe QDs has raised environmental and safety concerns. In recent years, indium phosphide (InP) materials, free from heavy metals, have become a focal point in EL QLED research. For InP EL QLED, the shell structure of InP/ZnSe/ZnS core/shell/shell QDs plays a crucial role in influencing carrier behavior and device performance. In this study, we prepare InP QDs with three different shell thickness, including ZnSeS shell with thickness of more than 6 nm (InP/ZnSe/ZnS QD size > 15 nm), and explore their EL properties. The research aims to investigate the potential mechanisms governing the interplay between shell thickness and carrier recombination, contributing to the optimization of InP QLEDs. Figure 1
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