Abstract
Electrical resistivity, Hall and Seebeck effects are measured in the temperature range between 77°K and 500°K on Cu2GeSe3. The carriers in as-grown sample are degenerate over the temperature range studied. By annealing at 230°C in vacuum for about 240 h, the carrier density decreases and an activation energy smaller than 0.01 eV appears in the Hall curve. When the annealing temperature is 700°C, the activation energy estimated from the Hall curve is 0.016 eV. The Hall mobility increases by a factor of 102 by the annealing at 700°C. The energy gap obtained from the resistivity data is 0.25 eV. The effective mass of holes is estimated to be 0.94 m from the Hall and the Seebeck data. It is suggested that there are two kinds of acceptor levels associated with Se vacancies at 0.016 eV and under 0.01 eV above the valence band, respectively. Result of the thermal conductivity measurement in a previous work may be explained by the phonon scattering by electronic transition between these acceptor levels.
Published Version
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