Abstract
The electrical conductivity, Hall effect, Nernst-Ettingshausen effect, thermoelectric power, and thermal conductivity of a narrow band gap semiconductor, platinum antimonide single crystals, have been investigated over a wide temperature range. On the basis of these measurements it was possible to calculate mobilities and effective masses of electrons and holes and their concentrations in the intrinsic region. It is shown that the mobility ratio μn/μp < 1 and that the effective mass of holes is less than that of electrons. [Russian Text Ignored]
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