Abstract
Experimental results reveal the existence of a null in the IF output power for certain bias voltage levels in single Schottky diode harmonic mixers at terahertz frequencies. This dramatic loss of IF power is due to a drastic increase of conversion loss and is governed by intrinsic diode parameters, as well as external parameters. For a second harmonic mixer, this is due to a competition of two mixing paths; one is the mixing of the RF with the doubled local oscillator (LO) frequency and the other a mixing of the RF with the LO to an LO sideband followed by a second mixing with the LO, both leading to the IF. In this paper, we present a systematic investigation of and some basic relations between these parameters and the depth and voltage levels where the conversion loss increases. Good agreement is obtained between a simple analysis and the experimental data on second and fourth harmonic mixers.
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