Abstract
physica status solidi (a)Volume 66, Issue 1 p. K75-K78 Short Note On the effect of high temperature heat treatment on the minority carrier lifetime in silicon K. D. Glinchuk, K. D. Glinchuk Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, Kiev Search for more papers by this authorN. M. Litovchenko, N. M. Litovchenko Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, Kiev Search for more papers by this author K. D. Glinchuk, K. D. Glinchuk Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, Kiev Search for more papers by this authorN. M. Litovchenko, N. M. Litovchenko Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, Kiev Search for more papers by this author First published: 16 July 1981 https://doi.org/10.1002/pssa.2210660167Citations: 4 Prospect Nauki 115, 252028 Kiev, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume66, Issue116 July 1981Pages K75-K78 RelatedInformation
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