On the effect of doping impurities on the formation of rod-like defects in silicon

Abstract

Defects appearing either after boron ion implantation and anealing at 760 °C or after irradiation with high-energy electrons in silicon specimens previously doped with boron, phosphorus, or arsenic, are studied. It is shown that the density and type of defects (rod-like defects or dislocation loops) is determined by the concentration and type of doping atoms, independent of the number of “primary” dislocations formed in the course of preliminary doping. The efficiency of the interaction of interstitial atoms with “primary” dislocations is higher at reducing the concentration of the doping impurity. [Russian Text Ignored].