Abstract
Accumulation of radiation defects in Si implanted with B+ or P+ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering.
Highlights
The processes of residual defect formation upon annealing are studied with the use of Transmission
Applied Sci., 2 (4): 877-880, 2005 constant is due to the introduction of point radiation defects known to be accumulated mainly in Defect Cluster Regions (DCR)
At the ion irradiation doses close to the threshold for the formation of extended defects (~1·1014 cm2) the concentration of radiation defects in the implanted silicon layer irradiated by P+ ions is 10 times as high as in the layer irradiated by B+ ions (Table 1)
Summary
The processes of residual defect formation upon annealing are studied with the use of TransmissionIon implantation in silicon brings about a great Electron Microscopy (TEM) methods.number of radiation defects stable at room temperatures. Radiation defects in the implanted silicon have in other works[1] this phenomenon has been attributed to been studied using the Electron Paramagnetic low efficiency of the extended defect formation on Resonance (EPR) method. Annealing of the than to the high-efficiency formation of extended implanted silicon structures was performed in sealed defects with the use of B+ ions.
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