Abstract
The effects of a non-abrupt space-charge region and finite duration of the refilling pulse and the repetition period on deep trap profiling by DLTS are analyzed for the case of small relative capacitance changes (ΔC ≪ C). An approach is suggested and expressions are obtained which allow to evaluate deep trap profiles through the dependence of the DLTS signal on the refilling pulse voltage with accurate account for these effects with the help of a simple computer program. The method proposed is essential when small trap concentrations in inhomogeneously and low-doped semiconductors are examined or when small filling pulses are implied in DLTS measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
