Abstract
In this paper we present the extensive nucleation and propagation characterization of fabricated nanomagnets by applying ns-range magnetic field pulses. For that, an artificial nucleation center (ANC) is created by focused ion beam irradiation (FIB) of a 50 x 50 nm area at the side of a Co/Pt island as typically used in Nanomagnetic Logic with perpendicular anisotropy (pNML). Laser-Kerr Microscope is applied for statistical evaluation of the switching probability of the whole magnet, while the wide-field-Kerr microscopy is employed to discriminate between the nucleation process (which takes place at the irradiated ANC area) and the domain wall propagation process along the magnet. We show that the nanomagnet can be treated as a single Stoner-Wolfhart particle above 100 ns field-pulse width, as the whole magnetization is switched during the field-pulse. By contrary, for field-pulse width below 100 ns, the domain wall (DW) motion is the limiting process hindering full magnetization reversal on that time-scale. However, the nucleation still follows the Arrhenius law. The results allow precise understanding of the reversal process and highlight the need for faster DW speed in pNML materials.
Highlights
Nanomagnetic Logic (NML) is a strong candidate for the Beyond CMOS scaling era and for that is listed in the latest International Technology Roadmap for Semiconductors 2015 (ITRS) in the “Beyond CMOS” technology chapter.[1]
NML is compatible with the existing CMOS technology and can be integrated on the same CMOS die in the back-end-of-the line process (BEOL)
Evaluation of magnetization was carried out using the Laser Kerr-effect measurements after applying the following steps: the magnet was saturated by applying high magnetic field in both positive and negative direction perpendicular to the sample surface
Summary
Nanomagnetic Logic (NML) is a strong candidate for the Beyond CMOS scaling era and for that is listed in the latest International Technology Roadmap for Semiconductors 2015 (ITRS) in the “Beyond CMOS” technology chapter.[1] NML is compatible with the existing CMOS technology and can be integrated on the same CMOS die in the back-end-of-the line process (BEOL) Such hybrid integration allows to use the advantages of both technologies. First benchmarking against CMOS shows that NML consumes at least 35 times less energy for NAND/NOR operation, compared to CMOS.[2] stacking several functional layers of NML on top of each other allows ultra high integration densities This is achieved by employing monolithic 3D integration, as experimentally proven by Eichwald et al.[3,4] NML comprises memory and logic functionality in a single technology.[5] In NML a current computational state is retained even with no energy supply. NML is one of the most competitive and experimentally proven candidates for the Beyond-CMOS devices research field
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