Spin orbit torque driven multi-level switching in He+ irradiated W-CoFeB-MgO Hall bars with perpendicular anisotropy

Abstract

Spin-orbit torque (SOT) induced magnetic switching has attracted an extensive interest due to its potential high efficiency in terms of switching time and power consumption [1]. Chiral domain wall (DW) motion driven by SOT in nanowires in the presence of Dzyaloshinskii–Moriya Interaction (DMI) at interfaces between HM and FM layers has shown a great potential for applications to racetrack memory devices [2]. One potential advantage of DW driven switching is that multi-level states can be obtained by controlling the position of the DW across a nanostructure such as wires or dots. As such, domain wall Memristors and the possibility to use DWs motion as synapses [3] have been recently demonstrated.Here, we study SOT driven multi-level states in Hall bars based on W-CoFeB-MgO structures by reducing locally the perpendicular magnetic anisotropy through He+ ion irradiation across a mask [4]. The structure of the investigated samples is W (4 nm)/Co20Fe60B20 (0.6 nm)/MgO (2 nm)/Ta (3 nm). The films were then patterned into Hall bars consisting in 20 μm wide and 140 μm long wires including 2 Hall crosses with 5 μm wide pads. As shown in previous studies [6], light He+ ion irradiation induced interface intermixing can be used to finely tune Ms, interface anisotropy and DMI in CoFeB-MgO structures. One of the Hall cross was then subsequently irradiated through a mask by He+ ions with an energy of 15 keV at a fluence of 1×1019 ions/m2 to reduce locally the perpendicular anisotropy Keff.Anomalous Hall Effect measurements combined with Kerr microscopy indicate that the SOT switching process is dominated by domain wall nucleation in the irradiated region followed by rapid domain propagation to switch the irradiated area (figure 1). The reduction of Keff by 20% under ion irradiation is accompanied by a large reduction of the switching current from 4.07 to 1.68 MA/cm2 under an in-plane 50 mT field; The switching current is determined by the threshold current to induce DW nucleation as checked by Kerr microscopy. As Keff is lowered in the irradiated Hall bar, the energy barrier to induce DW nucleation by SOT is also reduced. Due to the strong pinning of the DW at the transition between the irradiated and the non-irradiated region as evidenced by Kerr microscopy, we observe an intermediate Hall resistance state between the 2 saturated states (Figure 2). The possibility to increase the number of intermediate states by designing different value of perpendicular anisotropy through He+ ion irradiation paves the way towards efficient neuromorphic and memristor devices where the nucleation, motion and pinning can be tailored. **