Abstract
An attempt is made to study the Einstein relation for the diffusivity-mobility ratio of the electrons in degenerate n-type small-gap semiconductors under strong magnetic field on the basis of three-band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels, respectively. It is found, taking n-Hg1−xCdxTe as an example, that the Einstein relation exhibits an oscillatory magnetic field dependence due to Shubnikov–de Haas effect and decreases with increasing alloy composition. Besides the same ratio increases with increasing electron concentration and is in close agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion laws. In addition, the corresponding well-known results of parabolic semiconductors both in the presence and absence of magnetic field have been obtained from the generalized expressions under certain limiting conditions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
