Abstract
Germanium telluride (GeTe) is one of the most studied phase change materials. Surprisingly, only little is known about the density of states (DOS) in its band gap. In this paper, the DOS of amorphous GeTe films is investigated both experimentally and theoretically. We propose a model for this DOS as well as estimates of some of the transport parameters of this material. Thin films of amorphous GeTe have been deposited by sputtering. Their dark and photoconductivity have been measured as a function of temperature. By means of the modulated photocurrent technique their DOS was probed, while their absorption was investigated by photothermal deflection spectroscopy at room temperature. Numerical calculations were employed to reproduce the experimental results with a proper set of transport parameters and choice of DOS. These data constitute a good basis for further study on the influence of the DOS on the aging of the sample resistance (“resistance drift”).
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