On the defect responsible for the carrier injection-induced degradation of uncompensated n-type Czochralski silicon

Abstract

It is generally taken for granted that the bulk minority carrier lifetime in uncompensated phosphorus-doped silicon (Si) wafers is stable under illumination. In contradiction with this long-time belief, we report on a fast and significant lifetime degradation under light soaking for Czochralski wafers sampled from the top ingot end. We demonstrate that defect formation also proceeds during carrier injection by forward biasing Si heterojunction solar cells made from such wafers, suggesting a carrier-induced degradation rather than merely light-induced. The involved bulk defect is shown to preferentially form at the wafer center, where double Thermal Donors are in high concentration. The role of Thermal Donors is investigated further and the obtained preliminary results support their involvement in the reported carrier-induced degradation.