Abstract
For the fluid-containing systems the position of the low-temperature boundary of the cBN crystallization region in the p,T-diagram of boron nitride is defined either by the line of the incongruent melting of the BN compound with the solvent, or by the kinetics of the cBN nucleation and crystal growth. The position of the high-temperature boundary of the p,T-region of cBN crystallization is always defined by kinetics factors.
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