Abstract
The low-frequency noise behavior of gate-all-around vertical nanowire silicon nMOSFETs is described and discussed with respect to the static device parameters, like the threshold voltage and the maximum transconductance. The spectra are dominated by 1/f noise at low frequencies, followed by white noise. The 1/f noise power spectral density at 10 Hz is correlated with the maximum transconductance and the threshold voltage. This is interpreted in terms of the diameter of the nanowires.
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