On the Control of Plasma Chemistry and Silicon Etching Kinetics in Ternary HBr + Cl2 + O2 Gas System: Effects of HBr/O2 and Cl2/O2 Mixing Ratios

Abstract

The influences of both HBr/O2 (at constant Cl2 fraction) and Cl2/O2 (at constant HBr fraction) ratios in HBr + Cl 2 + O2 gas mixture on bulk plasma characteristics, active species densities and etching kinetics of silicon were studied. The results indicated that an increase in O2 content in a feed gas at constant Cl2 fraction in a processing gas (1) produces the stronger impact on plasma chemistry by the influence on the kinetics of electron-impact and atom-molecular reaction; and (2) provides the wider adjustments for both halogen atom flux and ion flux with the opposite tendencies with those for variable Cl2/O2 mixing ratio. The experiments demonstrated that the transition toward more oxygenated plasmas in both cases lowers the Si etching rate as well as result is decreasing effective reaction probability and etching yield. These effects may be associated with decreasing amount of adsorption sites for Cl/Br atoms as well as increasing sputtering (ion-stimulated desorption) threshold for reaction products due to the formation of the low-volatile silicon oxy-chlorides and-bromides in heterogeneous SiClx + O/OH and SiBrx + O/OH reactions.