Abstract
The charge-handling capacity of GaAs B.C.C.D.'s has been studied on the basis of the numerical solution of the 1-D and 2-D Poisson equations. Epitaxial and ion-implanted channels have been considered for two kinds of devices, respectively Schottky or M.I.S. gate B.C.C.D.'s. After having defined bulk storage conditions, we have showed that a 3-phase system and Schottky gate B.C.C.D. allow to store the more important signal-charge. A double implant channel structure is proposed to overcome the contact of the carriers with the interface in ion-implanted channel B.C.C.D. For both kinds of devices, the charge capacity increases when the channel doping concentration (or the dose) and when the channel thickness (or the implantation range) are reduced.
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