Abstract
Supported by experiment, we establish the following for the current flow across the epitaxial collector layer of a bipolar transistor biased at the onset of base-widening effects. The flow is one-dimensional only for large collector–base voltages, when it is space–charge limited and velocity saturated. As the collector–base voltage is lowered and the device enters quasi-saturation, the flow spreads progressively. The variation of the collector current with collector–base voltage, taking into account current spreading effects, is well modeled by a simple saturating exponential function with physically based constants.
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