Abstract
Negative differential resistance (NDR) has been observed at room temperature in GaInP/GaAs double-heterojunction bipolar transistors (DHBTs). Both the common-emitter and common-base current-voltage characteristics and their magnetic field dependence have been studied to confirm that the observed NDR is due to resonant tunneling. The collector-base voltages at which the collector current resonances occur are calculated and are consistent with the measured values. The devices exhibit an offset voltage of 57 mV and saturation voltage of <or= 2-V, both of which are the lowest reported values for GaInP/GaAs DHBTs. The collector-base breakdown voltage in these DHBTs is 31 V, and its variation with junction temperature is measured and described.<<ETX>>
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