Abstract
Microcrystalline regions with non-tetrahedrally coordinated SiO 2 structures are revealed in thin thermally grown SiO 2 films. SiO 2 with CaF 2 type structure, is found to be relatively stable under the electron beam or rf plasma exposures. Recrystallization is observed after 10 min electron beam irradiation. SiO 2 (CaF 2) structures are still observed after 50 min plasma exposures times.
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