Abstract
A very simple subcircuit model for SPICE simulation of bipolar transistors affected by the avalanche multiplication mechanism is presented. The currently available models for bipolar transistors in circuit simulators do not consider this effect, which can lead to serious simulation errors when high-frequency thin basewidths transistors with low and soft breakdown voltages are simulated. The simulated results predicted by SPICE with the proposed subcircuit are compared with the measured data obtained from several transistors with low and soft breakdown voltages and a good agreement is reported.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: AEUE - International Journal of Electronics and Communications
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.