Abstract
Resistive switching (RS) for nonvolatile data storage is a highly relevant field of research. Up to now, RS devices are fabricated via semiconductor processing technologies. This poses the question of whether integration of chemically tailored nanoparticles, either consisting of valence change or phase change materials, can be integrated in nanoelectrode configurations in order to explore their functionality for RS applications. This review discusses the RS properties of such nanoparticles by means of selected examples of both nanoparticle assemblies as well as on the individual particle level. Although this field of research is rather unexplored, it becomes evident that chemically tailored nanoparticles bear great potential for RS applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
