Abstract
The different on-resistance degradations of the p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide for different hot carrier stress conditions have been experimentally investigated for the first time. The difference results from the interface trap generation and the hot electron injection and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor, which has been analyzed in detail using the MEDICI simulator.
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