On prognosis of optimization of manufacturing of an enhanced swing differential Colpitts oscillator based on heterostructures to increase density of elements with account influence of mismatch-induced stress

Abstract

In this paper, we consider an enhanced swing differential Colpitts oscillator based on field-effect transistors. We introduce an approach to increase density of these field-effect transistors based on the analysis of mass transport. To illustrate the approach, we consider manufacturing of these transistors in heterostructure with specific configuration: substrate; epitaxial layer with several sections, which were manufactured using other materials; buffer layer between the substrate and the epitaxial layer. The considered sections should be doped by diffusion or by ion implantation after manufacturing of the heterostructure. After the doping, the infused dopant and radiation defects (radiation defects were generated during ion implantation) should by annealed framework optimized scheme. We also consider the possibility to decrease mismatch-induced stress in the considered heterostructure during manufacture of the considered oscillator. To make analysis of mass transport in the above heterostructures during the manufacture of the oscillator, we introduce an analytical approach. The approach gives a possibility to analyze mass transport in multilayer structures without crosslinking of solutions on interfaces between layers; to take into account spatial and temporal variation of parameters of linear and nonlinear mass transport at one time with account mismatch-induced stress.