Abstract
In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Highlights
In the present time several actual problems of the solid state electronics are intensively solving [1,2,3,4,5,6]
One way to decrease dimensions of elements of integrated circuits is manufacturing them in thin film heterostructures [3,4,5,11]
An alternative approaches to increase dimensions of integrated circuits are using of laser and microwave types of annealing [16,17,18]
Summary
In the present time several actual problems of the solid state electronics (such as increasing of performance, reliability and density of elements of integrated circuits: diodes, fieldeffect and bipolar transistors) are intensively solving [1,2,3,4,5,6]. One way to decrease dimensions of elements of integrated circuits is manufacturing them in thin film heterostructures [3,4,5,11]. In this case it is possible to use inhomogeneity of heterostructure and necessary optimization of doping of electronic materials [12] and development of epitaxial technology to improve these materials (including analysis of mismatch induced stress) [13,14,15]. The approach gives a possibility to decrease their dimensions with increasing their density framework an enhanced swing differential Colpitts oscillator. In this paper we consider a heterostructure, which consist of a substrate and an epitaxial
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