Abstract
<p>We consider possibility to increase field-effect transistor's density in a switched-capacitor step-down DC-DC converter. Based on this approach we analyzed manufacturing of the converter in a heterostructure with special structure. Some specific sections of the heterostructure must be doped by ion implantation or by diffusion. After this procedure optimized annealing has been done. We also obtained conditions for decreasing of mismatch-induced stress value in this heterostructure. An analytical approach for analysis of heat and mass transport in multilayer structures has been introduced. The approach gives a possibility without crosslinking of solutionson interfaces between layers, take into account (i) spatial variation of parameters of considered processes; (ii) temporal variation of parameters of considered processes; (iii) nonlinearity of considered processes; (iv) mismatch-induced stress.</p>
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