Abstract
A great enhancement of photoluminescence from CdS-doped PbS [1] can be attributed to the recombination flux from the wide-into narrow-gap phase due to the field of the variband transition region. A semiconductor heterostructure model accounting for the enhancement of luminescence in the PbS-CdS system is presented. The concentration profile of nonequilibrium charge carriers and the integral intensity of luminescence at the interface between the narrow-and wide-gap phase are numerically studied.
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