Abstract
A four-channel gas feeding was installed at a commercial e-beam lithography system. The gas system and the deposition technique were tested with a solid precursor (CpPtMe 3). With this material base we investigated the deposition behaviour on different substrates (Si, SiO x on Si), at different gas pressures and different beam energies ( E 0=2.5 and 15 keV). In all cases a minimum feature size of 30 nm was obtained. The growth of simple point structures both in width and height shows a clear dependence on the pixeltime. The feature size can thus easily be controlled via the pixeltime of the e-beam. In addition to fundamental research, we have produced nanowires and other arrangements by using this technique. All deposition structures were found to be accurately placed in a given wiring by using mix&match-technique.
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