Abstract
In this paper, we introduce an approach for increasing integration rate of bipolar heterotransistors in the framework of a single-leg N-level cascaded H-bridge multilevel inverter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
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