On diffusion of radiation defects during low and high temperature implantation near phase transitions

Abstract

Since the last decade, radiation defects in solids during surface modification by ion beams have been extensively investigated. In this paper, defect diffusion coefficients for a variety of implantation energies and temperatures have been calculated on the basis of a modified model [V.A. Starostin, Phys. Chem. Mater. Treat. 5 (1999) 104–105] by Beloshitsky [P.A. Aleksandrov et al., Rad. Eff. 88 (1986) 249–255] with an emphasis given to relevant experiments [K.D. Demakov and V.A. Starostin, Tech. Phys. 46(4) (2001) 490–491]. For combinations of hydrogen in silicon (0.6 keV, 40 K), deuterium in diamond-like carbon (27 keV, 293 K) and arsenic in silicon (40 keV, 1123 K) this resulted in the equal value of the defect diffusion coefficient. A similar value is obtained for thermal diffusion of lead in zirconium. The advanced model enables quantitative estimates of self-diffusion coefficients as well as both defects and lattice vacancy profiles to be obtained.