Abstract
A theoretical model is proposed for describing the accelerated diffusion of boron and phosphorus impurity in silicon during high-temperature implantation. The model takes into account the production and diffusion of impurities and point defects and the formation and decomposition of defect-impurity pairs. The formation of dislocations and an increase (decrease) of their size during bombardment is taken into account. Dislocations are sinks for defects and impurities. The computed profiles are compared with existing data. It is shown that dislocations play an important role as trapping centers. Oscillatory behavior of the impurity profile was observed near the surface; this behavior is due to impurity implantation and diffusion processes occurring simultaneously.
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