Abstract
On diffused silicon pn junctions doped with gold, junction capacitance for very low and high frequencies was analyzed and gold trap concentration was determined by measurement of junction capacitance on the basis of the analysis. It is concluded that the gold trap concentration gives reasonable value, because the gold trap concentration in the diffused diodes quenched after gold diffusion agrees with the gold concentration determined by the tracer analysis with Au198. The values of the gold trap concentration in the diffused diodes quenched after gold diffusion are almost equal to the solubility of the interstitial gold, but they are less for more slowly cooled diodes and the diodes alloyed after gold diffusion.
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