Abstract
The effects of bandgap narrowing due to stress generated during Shallow Trench Isolation (STI) are analyzed. Reverse-bias junction leakage and capacitance measurements are correlated to results from device simulation. A locally varying stress dependent bandgap model is implemented to understand the influence of stress effects. Increases in both junction capacitance and leakage agree well with experiments. Results of leakage and capacitance on the 0.18 m and 0.09 m technologies indicate that effects of process induced stress on device behavior need careful attention.
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