Abstract
Extended type defects in heavily doped GaAs:Te (n 1 x 10 19 cm-3 ) after annealing at 700°C and 1150°C were studied by transmission electron microscopy, by high resolution technique and energy-dispersive X-ray analysis. Assuming, according to the literature that these defects are enriched in impurity atoms it is suggested that this solely is not sufficient to explain changes of electrical properties during annealing. Estimated amount of atoms involved in faulted dislocation loops seems to be too small, energy-dispersive X-ray microanalysis of precipitates did not show large differences in composition with the matrix. PACS numbers: 61.72.Nn, 61.72.Vv, 72.80.Ey
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