Electrostatics of Double Channel Bipolar FET

Abstract

Electrostatics of Double-channel Bipolar FET using two separate channels for electrons and holes has been analyzed numerically using coupled Schrodinger-Poisson equations using self-consistent scheme, while effective masses and bandgaps of the materials have been calculated using standard Density Functional Theory(DFT). Two different materials namely $MoS_{2}$ and Phosphorene separated by wide-bandgap Hexagonal Boron Nitride ( $hBN$ ) are used for n-channel and p-channel respectively because of high mobilities in their respective channels. CV characteristics under single bias seems almost sum of the individual channel capacitances, but under double bias configuration CV can be taken as the averages of channel capacitances. Under single bias, electron concentration changes significantly but change in hole concentration is negligible, but under double bias both electron and hole concentration change in the same manner.