On-chip p-MOSFET dosimetry (CMOS ICs)

Abstract

On-chip p-FETs were developed to monitor the radiation dose of n-well CMOS ICs by monitoring threshold voltage shifts due to radiation-induced oxide and interface charge. The design employs closed-geometry FETs and a zero-biased n-well to eliminate leakage currents. The FETs are operated using a constant current chosen to greatly reduce the FET's temperature sensitivity. The dose sensitivity of these p-FETs is about -2.6 mV/krad(Si) and the off-chip instrumentation resolves about 440 rad(Si)/b. When operated with a current at the temperature-independent point, it was discovered that the preirradiation output voltage is about -1.5 V, which depends only on design-independent silicon material parameters. The temperature sensitivity is less than 63 mu V/ degrees C over a 70 degrees C temperature range centered about the temperature-insensitive point.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>