Abstract
A method for extracting values of oxide and interface charge from the current-voltage (I-V) characteristics of long-channel MOSFETs is described. The one-dimensional charge-sheet model developed by Brews provides the basis for the I-V characteristics. The I-V characteristics given by this model are optimized with respect to a set of experimental data for an irradiated devrice with the flatband voltage and the mobility the only free parameters. Simple relationships between these parameters and the radiation-induced interface and oxide charge are assumed.
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