Abstract

In this report, we present a process for the fabrication and tapering of a silicon (Si) nanopillar (NP) array on a large Si surface area wafer (2-inch diameter) to provide enhanced light harvesting for Si solar cell application. From our N,N-dimethyl-formamide (DMF) solvent-controlled spin-coating method, silica nanosphere (SNS in 310 nm diameter) coating on the Si surface was demonstrated successfully with improved monolayer coverage (>95%) and uniformity. After combining this method with a reactive ion etching (RIE) technique, a high-density Si NP array was produced, and we revealed that controlled tapering of Si NPs could be achieved after introducing a two-step RIE process using (1) CHF3/Ar gases for SNS selective etching over Si and (2) Cl2 gas for Si vertical etching. From our experimental and computational study, we show that an effectively tapered Si NP (i.e., an Si nanotip (NT)) structure could offer a highly effective omnidirectional and broadband antireflection effect for high-efficiency Si solar cell application.

Highlights

  • The fabrication of silicon (Si) surface nanostructures has gained a great deal of attention in the past several decades because Si surface nanostructures have great potential due to their enhanced optical and electrical advantages that can differentiate them from bulk Si materials

  • We describe a simple large-area-capable (≥2-inch diameter Si wafer) Si nanostructure fabrication process that enables the processing of Si nanopillars (NPs) with desired shape on an expanded Si surface area

  • From these experimental and computational results, we successfully reveal that a well-tapered Si NP (i.e., an Si nanotip (NT)) structure can provide a highly effective omnidirectional and broadband AR effect for high-efficiency Si solar cell application

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Summary

Introduction

The fabrication of silicon (Si) surface nanostructures has gained a great deal of attention in the past several decades because Si surface nanostructures have great potential due to their enhanced optical and electrical advantages that can differentiate them from bulk Si materials. Surface reflection with the nanostructured layer has much less dependency on the incident angle of light, offering an omnidirectional AR effect that is highly desired for high-efficiency solar cell applications [7]. The extensive recent research on nano-scale (or sub-micron) surface structures has revealed that optimized nanostructure periods, scales, and shapes can deliver greatly enhanced light absorption, even with a significant reduction in the thickness of the active layer. This can be attributed to elevated light interference and diffraction efficiency in the active layers, providing improved light-trapping in the absorption layer [13,14,15]. From these experimental and computational results, we successfully reveal that a well-tapered Si NP (i.e., an Si nanotip (NT)) structure can provide a highly effective omnidirectional and broadband AR effect for high-efficiency Si solar cell application

Experimental Section
Discussion
Nanostructure Fabrication with RIE Process
Optical Properties of Fabricated Si Nanostructures
Findings
Measured reflectance
4.4.Conclusions
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