Abstract
The characteristics of a p–n junction that consists of MoS2 thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS2/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS2/ZnO nanorod devices that are treated with H2O2. H2O2 treatment results in the modification of the MoS2–ZnO interface, so the rectification performance for MoS2/ZnO nanorod devices is improved. H2O2 treatment also increases the responsivity of MoS2/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H2O2 treatment.
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