Abstract
Lattice ohmic mobility of holes in cubic semiconductors has been theoretically evaluated accounting for most fundamental aspects of the physical problem. Solutions sufficently simple for the interpretation of experimental data have been obtained. (1) The deformation potential approach has been used in the description of the hole-acoustic and hole-optical phonon scattering mechanism. (2) The overlap corrections introduced in the scattering rates by the symmetry of the valence band wave functions, which are predominantly p-like, have been taken into account. (3) Intra-band and inter-band transitions within and between the heavy and light mass bands have been considered. (4) Non-parabolicity and warping of equienergetic surfaces has been omitted in favour of spherical parabolic bands. Results show that (2) doubles the mobility with respect to the case in which overlap is omitted, and (3) halves the mobility when the two valence bands have equal effective masses with respect to the case in which inter-band scattering is omitted. Comparison with experimental mobility is good for Ge and fair for Si due to the strong non-parabolicity of its valence bands.
Published Version
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